| 摘要 |
PURPOSE:The titled apparatus having an introductory port of a gas containing the composition components of a single crystal from a compound semiconductor of Groups III- V, parts for feeding the gas into a melt in a crucible, and a gas discharging port for discharging the gas, and capable of reducing the dislocation density and growing a crystal with a few vacancies, e.g. striations. CONSTITUTION:A polycrystalline InP ingot and a prescribed amount of In are introduced into a quartz crucible 1, and the interior of a container 2-4 is evacuated. N2 gas of high purity is then filled in the container 2-4, and the N2 gas is steadily introduced thereinto. The raw materials are then molten by the induction heating, and a seed crystal 2-7 located above the crucible 1 is slowly lowered while rotated and brought into contact with the surface of the melt in the crucible 1. The seed crystal 2-7 is slowly lifted to thicken a crystal 2-17. At the given diameter of the crystal, evaporated PCl3 indicated by 2-9 is introduced from introductory ports 2-10 into the container 2-4. The temperature of the crucible 1 is kept at 995 deg.C, and the flow rate of the PCl3 is increased to reduce the deviation of the stoichiometric composition and give the supercooled state. The flow rate of the PCl3 is controlled to make the crystal uniform and the deviation of the melt composition ratio uniform. |
