| 摘要 |
PURPOSE:To form a pattern which has a tapered sectional shape and preferable dimensional accuracy by etching a film to be etched and exposed from a masking material by an isotropic etching to allow a part of the film to remain to form a tapered end surface and then completely remove a thin film to be etched remaining being treated by anisotropic etching. CONSTITUTION:A phosphorus-doped polycrystalline silicon film 14 under a resist pattern 15 is isotropically etched by a plasma etching to a tapered state. Then, a control gate electrode 17 of approximately entirely tapered end surface 16 is formed by reactive ion etching. Subsequently, with the electrode 17 as a mask a transistor section is etched, and is thermally oxidized in wet oxygen atmosphere. At this time, an interlayer insulating film 18 is formed around the electrode 17, and the film 18 part of the end surface 16 of the electrode 17 is preferably tapered without overhang. Subsequently, a molybdenum silicide film is accumulated, and is patterned, thereby forming a capacitor electrode 19. |
