| 摘要 |
PURPOSE:To obtain an image-forming material enhanced in sensitivity, and resistance to light fatigue, heat, and repeated uses, by providing a support, a barrier layer, an amorphous silicon layer, and an amorphous inorganic semiconductor forming a hetero junction layer. CONSTITUTION:A photoconductive layer 103 is formed on an electrophotographic support 102 to provide an electrophotographic image-formin material 101, and this layer 103 has a free surface 107, and composed of a layer 104 and a layer 105, either of them is made of hydrogenated amorphous silicon, the other made of amorphous inorganic semiconductor, and a hetero junction layer 106 is formed. As materials for constituting the amorphous inorganic photoconductor, chalcogen compounds or the like consisting of Se, Te, S or at least 2 of them, or in addition, As, Ge, or Si are embodied. |
