发明名称 |
Transistor with plural parallel units |
摘要 |
This invention discloses a structure of a transistor suitable for high frequency and high output power. An emitter region having a first conductivity type is formed in a base region having opposite conductivity type in contact with a collector region having the first conductivity type. Said emitter region is divided into a plurality of active emitter regions by a plurality of isolation regions having said opposite conductivity type which are formed in said emitter region and said active emitter regions are connected in parallel by an electrode such as for lead-out. The isolation regions may be used as stabilizing resistors and connected between each said active emitter region and the electrode.
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申请公布号 |
US4370670(A) |
申请公布日期 |
1983.01.25 |
申请号 |
US19800138111 |
申请日期 |
1980.04.07 |
申请人 |
FUJITSU LIMITED |
发明人 |
NAWATA, YOSHIAKI;NAKATANI, YASUTAKA;NAKAZAWA, HARUKI |
分类号 |
H01L21/331;H01L29/08;H01L29/72;H01L29/73;(IPC1-7):H01L29/72 |
主分类号 |
H01L21/331 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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