| 摘要 |
PURPOSE:To eliminate voltage drop and to mitigate a temperature rise in a semiconductor chip by a method wherein internal wirings are formed at almost the same height as that of bumps to reduce continuity resistance and thermal resistance. CONSTITUTION:If the surface of a semiconductor wafer is covered with a photoresist and plating is applied by opening only the places forming bumps, metal is deposited at the opening sections only and the bumps are formed. Therefore, internal wirings having a problem of continuity resistance can be formed with the same thickness as that of the bumps by the same process for bump formation. As shown in the drawing, te internal wirings can form with the same thickness as that of a power bump. The drawing shows an example that the internal wirings 14 and 14' connected to the power bump 12 and the grounding bump 12' have a thickness of 15-40mum by forming the internal wirings 14 and 14' by the same process for bump formation. The bumps are normally made of gold or copper. This invention can reduce the continuity resistance of the internal wirrings and can prevent malfunction by voltage drop. |
