| 摘要 |
PURPOSE:To perform fine working with no residue at all by forming a pattern of org. resist on a thin film of chromium or Nichrome, and etching the film by the use of ammonium ceric nitrate then subjecting the film to a nitric acid treatment. CONSTITUTION:Prescribed patterns are formed with an org. photoresist film on the thin film of chromium or Nichrome on a substrate. The substrate is immersed in at least one one of amonium ceric nitrate or a satd. soln. of ammonium ceric sulfate whereby the thin film is etched. After the substrate is further immersied in an aq. nitric acid soln., it is rinsed to remove the org. resist. The residues produced in the thin film etching are removed thoroughly by the above- mentioned method. |
