| 摘要 |
PURPOSE:To obtain the resistor whose resistance value is small without using a diffused region having a large area, by forming two contact holes in a configuration wherein comb shapes are assembled, and constituting the resistor in the diffused region between the contact holes. CONSTITUTION:The diffused region 2 is formed on a silicon substrate 1 and an oxide film 3 is formed on the surface. Then the comb shaped contact holes 4a and 5a are formed and assembled each other on the oxide film 3, and electrodes 6a and 7a, which are contacted with the diffused region 2 through the contact holes 4a and 5a, respectively, are formed on the oxide film 3. The part which is held by both contact holes 4a and 5a in the diffused region 2 becomes the main part of the resistor. In this constitution, since the effective width of the region can be made large, the resistor can be made small. The diffused layer having the large area is not required. When the diffused layer is formed by ion implantation, the resistance value can be accurately controlled. |
