| 摘要 |
PURPOSE:To enable an electron beam to be constantly irradiated on a sample under an optimal condition, and enable a homogeneous annealing treatment of the electron beam to be performed by detecting the surface temperature of the sample, comparing the detected temperature with a preset temperature, and varying and controlling the irradiation intensity of the beam according to thus given difference. CONSTITUTION:Both the detection signal of an infrared-ray detecting element 13 and the output signal of a synchronizing-signal producing circuit 14 are supplied to a phase detecting circuit 15. Both the detection output of the circuit 15, and standard temperature information sent from a standard-temperature detecting element 17 via an amplifier 16 are supplied to a complex circuit 13. After the temperature of a point of a sample 8 on which a beam is irradiated is detected with the complex circuit 13, the detected temperature information is supplied to a computer 20 via an interface 19. On the other hand, the computer 20, in which an anneal temperature is set beforehand, gives the difference between the above set temperature and the above detected temperature which is used as the input to the computer 20, and varies and controls the scanning speed of an electron beam or the bias of an electron gun 1 according to the avove difference. |
