| 摘要 |
PURPOSE:To produce a bubble memory device of large capacity and high density with a low cost and high efficiency, by forming a microgap in a process under which a gap part is formed between the transmitting elements of a magnetic bubble memory device and then the shape of each transmitting element is formed. CONSTITUTION:A magnetic garnet 2, an SiO2 insulated layer 3, a conductor layer 4 of Al, etc., an SiO2 layer 6 and a ''Permalloy '' layer 7 are formed in that order on a Gd-Ga garnet substrate 1. Then a photoresist 8 is coated on the layer 7, and the part shown by the dotted line (the part where another ''Permalloy '' layer having a gap is set in a subsequent process) is etched with use of an exposure mask to remove the upper part including the layer 4. Then an SiO2 insulated layer 9 and a ''Permalloy '' layer 10 are formed on the entire surface of the substrate, and a resist layer plus the layers 9 and 10 above the resist layer are lifted off to form a ''Permalloy '' layer 10' having a narrow gap between the layers 7 and 10. Then the photoresist is coated on the surface of the obtained material and then etched by the exposure and with use of a pattern mask (e) of the transmitting element. Thus the shape is formed for the ''Permalloy '' transmitting elements 7 and 10' respectively.
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