发明名称 Charge-transfer switched-capacity filter
摘要 A switched capacity filter having capacities formed by MOS technology on a semiconductor substrate. The connection between two capacities whose first plates are formed by the semiconductor substrate are periodically connected by providing transfer of charges in the substrate on which these two capacities are integrated. The external or other plate of each capacity receives, the input voltage, or a reference voltage, or the surface potential under another capacity which is provided by a reinjection and reading device formed from a diode and a voltage follower stage.
申请公布号 US4365217(A) 申请公布日期 1982.12.21
申请号 US19800210141 申请日期 1980.11.24
申请人 THOMSON-CSF 发明人 BERGER, JEAN L.;COUTURES, JEAN L.
分类号 H01L21/822;H01L27/04;H03H15/02;H03H19/00;(IPC1-7):H03H19/00;G11C27/02 主分类号 H01L21/822
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