| 摘要 |
PURPOSE:To obtain an Mo gate MOSFET having stable threshold voltage and high reliability by specifying the thickness of the Mo film of a section functioning as a gate electrode within the range of 500-2,500Angstrom when the Mo film is used as gate electrode wiring in an IC containing the MOS type FET. CONSTITUTION:A thick field oxide film 2 is formed to the peripheral section of a P type Si substrate 1, and the Mo film 5 functioning as the gate electrode is laminated and coated to the surface of the substrate 1 surrounded by the film 2 through a film 3 afterward serving as a gate oxide film. The gate oxide film and the gate electrode with predetermined shape are formed through etching, and N<+> type source and drain regions 4 are molded into the substrate 1 at the both sides while using the oxide film and the electrode as masks. The whole surface is coated with a layer insulating film 6, windows are shaped while being made correspond to the regions 4, and Al wiring 7 is attached to the windows. In this constitution, the thickness of the Mo film of the gate electrode 5 is set within the range of 500-2,500Angstrom , and stable threshold voltage is obtained while avoiding the increase of resistance and the difficulty of minute machining. |
