Photoconductive film.

摘要

A photoconductive film comprises a photoconductive layer (3) which is mainly made of selenium and has a region (b) in the thickness direction containing tellurium. At least one of (i) a portion in a direction of hole flow of said region (b) and (ii) a portion in the hole flow direction of another region (c) which is located adjacent to said region (b) is doped with at least one member selected from oxides, fluorides and elements which belong to groups II, III and VII, which are capable of forming negative space charge in selenium, at a concentration in a range of 10 ppm to 1% by weight on an average. Typical examples of such dopants include CuO, In2O3, Se02, V205, MoO3, WOa, GaF2, InF3, Zn, Ga, In, Cl, I and Br. The "after image" characteristic ascribable to incident light of high intensity can be significantly improved.