| 摘要 |
PURPOSE:To fetch the luminescence efficiently from the front of the elements by a method wherein the thin region is provided on the mesa of the central part of the inverse bias junction face of the negetive resistance luminous elements. CONSTITUTION:The element is provided with the thyrister constitution wherein the second conductive type first semiconductor crystal layer 3, the first conductive type second semiconductor crystal layer 4 and the second conductive type third semiconductor crystal layer 5 are successively laminated. The junction comprised of the second semiconductor crystal layer 4 and the third crystal layer 5 is utilized as the luminous junction. The thickness of the first semiconductor crystal layer 3 is capacitated for arcing by means of the impressed voltage as specified. The ohmic electrodes 6 are arranged on the peripheral elements of the semiconductor crystal layer surface. The mesa part 2 of the first semiconductor crystal layer 3 becomes the arc region. The current flows centering on this region forming the region 8 into the main luminous region. This luminescence may be fetched out of the central front of the elements. |
