| 摘要 |
<p>PURPOSE:To obtain an epitaxial layer with low density easily and at a good reproducibility by a method wherein the solution obtained by adding by the amount unchanging the conduction mode the impurity having the property opposite to the conduction mode before adding the impurity is distributed to a multiplicity of holes. CONSTITUTION:The material of growth solution as much as for a multiplicity of substances is stored in a reservoir 1 and molten. Thereafter, the solution is distributed to a small hole 2 by using a slider 4. The impurity having the conduction mode opposite to the solution is added without changing the conduction mode of the solution. The growth solution for a multiplicity of substances is prepared at the same time as described above. In such a method, the amount of the impurity added for compensation is obtained much than for every one substance, the measurement of the amount is simplified and the error can be reduced, And also the processing time can be shortened and if the component of a high vapor pressure may be contained in the growth solution, the evaporation can be neglected during the processing and no variation is found in the composition. Further, the unevenness in the density among the growth solution is reduced and the epitaxial layer with low density and good reproducibility can be formed.</p> |
