| 摘要 |
PURPOSE:To improve performance in the light receiving element wherein a one conductive InP layer is formed on an InGaAsP layer, by implanting Si<+> ions in said InP layer, thereafter performing heat treatment, and providing a reverse conductive type impurity diffused region on the surface. CONSTITUTION:On an N<+> type InP substrate 1, an N type InP bufer 2, an N type InGaAsP light absorbing layer 3, and N type InP window layer 4 are layered and epitaxially grown. The Si<+> ions are implanted in the layer 4, and an implanted layer 31 is formed. Then, in order to form a guard ring part 33, an injection mask 32 is provided, Be<+> ions are implanted, and the implanted layer 33 is provided. Thereafter the mask 32 is removed. A PSG film 34 is deposited on the entire surface. Heat treatment is performed at 750 deg.C for 20min. An N<-> type layer 35 of 5X10<15>/cm<2> is formed beneath the interface with the implanted layer 31 for about 3mum in the InP layer 4. Only the Be implanted part is reversed into the P type and a region 33' is obtained. Then, by using a mask 36, a P<+> type region 37 is diffused and formed in the region 35 surrounded by the region 33'. |
