| 摘要 |
A radiation tolerant semiconductor device has a buried grid (11) of enhanced concentration of an impurity type opposite to that of the semiconductor substrate. Such a device may be made by providing beneath the upper surface of a semiconductor substrate a continuous region (12, 13) of a first impurity type which is the same as that of the semiconductor substrate, the region having an array of regularly spaced via portions (13) at a depth beneath the surface greater than the depth of the remainder of the region (12), and providing at a depth substantially coincident with the via portions (13) a second impurity of conductivity type opposite to that of the first impurity at a dosage level lower than that of the first impurity to form the buried grid (11). |
