| 摘要 |
PURPOSE:To prevent fall-down of a photoresist pattern and to improve a yield rate in miniaturizing process, by bending and forming a slender pattern having a high aspect ratio in a step when resist for forming the pattern on a substrate is provided. CONSTITUTION:A pattern 2 is bent and formed in a semiconductor device having the slendar pattern 2 with a high aspect ratio in a step when resist 2 for forming the pattern is provided on a substrate 1. The interconnection patterns, which are formed in multiple lines (three lines in the Figure) as shown in the Figure, are bent at a specified angle (+ or -theta) with respect to the direction of the interconnection. The interconnection patterns are formed at an equal interval. In this method, fall-down and separation of the pattern are prevented in the step for forming the interconnection pattern, a yield rate is improved and minia turization and high integration density of the semiconductor device can be implemented. |
