| 摘要 |
PURPOSE:To shorten a lifting-off treating time and to prevent the production of a burr by emitting an ultraviolet ray to a positive type photoresist film, superposing a metal or insulating film, swelling the resist and dipping it in a resist solvent. CONSTITUTION:When a pattern of a positive type photoresist 2 is formed on an Si substrate 1 and lead alloy layers 31, 32 are laminated, a thin film 33 is simultaneously adhered to the side wall. Then, when the substrate 1 is dipped in a mixture solution of a lower alcohol and aromatic hydrocarbon solvent to swell the resist 21, cracks are produced at the films 31 and 32. Subsequently, it is dipped in a resist solvent, a high frequency is applied to it, and the films 21 and 22 are lifted off. According to this structure, the production of a burr due to the remaining layer 33 at the side wall in the vicinity of the surface of the substrate 1 can be particularly prevented, the layers 33, 32 can be rapidly and completely removed, a metal film of high accuracy in shape and quality can be readily formed. |
