发明名称 WAVELENGTH SWEEPING SEMICONDUCTOR LASER DEVICE
摘要 PURPOSE:To improve the responsiveness and output stability for the titled device by a method wherein, in the case of a distributed-feedback type or distributed- reflection type laser element using a Fabry-Perot resonator or a diffraction grating, the element is vibrated by bending and intersecting in the direction of the laser oscillation waveguide passage, and the optical effective length of a resonator is changed. CONSTITUTION:A laser active region 3, which is also used as an optical waveguide core layer, is formed on a substrate 2 consisting of GaAs and the like, and a clad layer 4 is formed on the region 3. Then, a laser injection current region 5 is provided in the center part on the surface of the layer 4, and diffraction gratings 6a and 6b are formed on both sides of the region 5. The two resonant mirrors, facing each other on both sides of the laser active region located directly below the region 5, begin to function by the help of the above gratings. The distributed-reflecting mirror type semiconductor laser element 1 is constituted as above, and the element 1 is bent in the vertical direction against the laser oscillation waveguide direction A by contacting the pressurizing rod 8 to the region 5 and using supporting points 7a and 7b provided below both ends of the substrate 2. Thus, the oscillation wavelength can be sweeped while the effective refraction index is being changed.
申请公布号 JPS57190388(A) 申请公布日期 1982.11.22
申请号 JP19810075890 申请日期 1981.05.20
申请人 TOKYO SHIBAURA DENKI KK 发明人 MOGI NAOTO
分类号 H01S5/00;H01S5/06;H01S5/125 主分类号 H01S5/00
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