| 摘要 |
PURPOSE:To improve light emission efficienct bt piling an alloy layer of Be or Zn whose main component is Au, a Ta layer which contains 0.6-1.2wt% of N and a metal layer composed of Au or Al successively on an p layer electrode which composes P-N junction. CONSTITUTION:An electrode 34 composed of, for instance, Au-Ge alloy layer is formed on the side of an n-type GaP layer 31. Then an electrode 35, which is composed of an alloy layer 35a which has thickness about 0.05-0.1mum and contains 1wt% of Zn, a Ta layer 39 which has thickness about 0.2-0.4mum and contains 1wt% of N and an Au layer 35b which has thckness about 0.2-1mum, is formed on a P-type Gap layer 33. The Ta layer 39 is formed by vacuum deposition. In other words, an wafer on which the alloy layer 35a is deposited is put in a deposition equipment and the equipment is exhausted to the rate of vacuum about 10<-7>-10<-8> Torr and then ammonia or N2 is introcuced to the rate of vacuum 10<-7>-10<-8>Torr mark and Ta is deposited under such condition and the Ta layer which contains 1wt% of N is formed. |
