| 摘要 |
PURPOSE:To perform surface process without contaminating a clean epitaxial growth surface, by achieving a substrate crystal process followed by epitaxial growth in a manufacturing equipment of the same III-V family compound semiconductor element. CONSTITUTION:In a manufacturing equipment of III-V family compound semiconductor elements, a substrate crystal 4 exposed to methylhalide atmosphere at a selective etching chamber 2 is selectively irradiated by a laser beam 9. The substrate crystal 4 is etched selectively. More than one layer of epitaxial growth is achieved continuously on the substrate crystal 4 at a gaseous epitaxial growth chamber 1 in the same manufacturing equipment, followed by the etching process. |
