| 摘要 |
PURPOSE:To obtain an X-ray exposure mask with high yield, by providing an aperture to a spacer thick film with use of an insulator thin film between a base thin film and a spacer thick film as a stopper and removing the instulator thin film at the aperture part prior to the electroplating. CONSTITUTION:An X-ray transmitting supporter layer (like a silicon nitride film) 2 is formed on a mask supporter (like a silicon single crystal substrate) 1. A base thin film (gold film) 3 for electroplating is coated on the layer 2, and an insulator thin film (SiO2 film) 41 is put on the film 3. Furthermore a spacer thick film (polyimide resin film) 4 for electroplating is formed on the film 41, and an etching mask is formed on the film 4. Then the oxygen ion beam is irradiated 5 on the entire surface of the etching mask. the irradiated area of the film 4 is etched, and an aperture 6 is formed. The film 41 is removed by the buffered hydrofluoric acid and by using the film 4 as a mask, and the gold of the film 3 is partially exposed. Then the electroplating is carried out by using the film 3 as an electrode. Thus an X-ray, absorber pattern 7 is obtained. After this, the film 4 is removed, and the insulator 41 is removed to obtain the titled mask. |
