| 摘要 |
PURPOSE:To form the opening section of an insulating film having a taper by conducting dry etching by using a mask having a taper. CONSTITUTION:A SiO2 layer 32 is formed onto a Si substrate 31, and a resist 33 is shaped as a lift-off material. A SiO2 layer 34 is further shaped through plasma CVD, but the layer 34 is formed as shown in (b) when the surface is etched by HF because the speed of etching is faster in a section A through the method. When the resist 33 is remoed, the oxide film 34 is also removed. When the whole surface is etched by RIE, the opening section is widened as shown in (e) with the progress of etching because the taper is formed in the oxide film 34 as the mask while the thickness of the oxide film 34 is also decreased gradually. The opening is formed as shown in (d), and a wiring layer having high reliability free of steo disconnection is shaped when Al 35 is evaporated. |
