| 摘要 |
<p>PURPOSE:To reduce the width of scribing lines, by providing an opaque pattern of the scribing lines on a light transmitting film, irradiating light on a resist film on the back surface of the substrate from the upper surface of the substrate, and performing the scribing from the back surface of the substrate along the tranferred pattern. CONSTITUTION:An FET 6 is provided on the sapphire substrate 1, an Si film pattern 12 is formed on both sides along the scribing lines 11, and a transparent CVD SiO2 film 13 is formed on the back surface of the substrate up to about 3,000Angstrom . Then a positive resist film 14 is applied. The ultraviolet ray is irradiated from the upper side of the substrate 1 on which element region 6 is provided, and the pattern 12 is transferred to the back surface. Then the SiO2 film 13 is etched with the transferred resist pattern 15 as a mask and the pattern 16 is formed. Then the resist 15 is removed, and the wafer is aligned by the pattern 16. Thereafter the scribing is performed along the pattern 16 in order to provide a groove 17 and the wafer is divided. In this method, the effect on the element is less, the width of the scribing lines can be largely reduced, and the high density can be implemented.</p> |
