| 摘要 |
PURPOSE:To produce a semiconductor thin film in which crystal grains are large and their carrier mobility is high by a method wherein a substrate is coated with a polycrystalline semicanductor film whose part is covered with a mask and the rest exposed part is irradiated with ions to become amorphous and then heat treatment is applied after removing the mask to grow the semiconductor film in a solid-phase epitaxial growth from the ion non-irradiated part. CONSTITUTION:A polycrystalline silicon film 2 in a desired pattern is formed on a silicon substrate 1 via an Si3N4 film, and one end of the film 2 is covered with an SiO2 or metal mask 3. Next, Si<+> ions are implanted over the whole with the temperature of the substrate 1 kept at nearly 20 deg.C to make the exposed film 2 to be amorphous. Then, heat treatment at 575 to 600 deg.C is made in N2 gas for around 20 hours to make a solid-phase epitaxial growth over the area renging from a part of non-ion implantation to an ions-implanted part. With this process, the size of crystalline grains of the polycrystalline film is grown, and thus the thin film of a high carrier movility can be produced. |
