| 摘要 |
PURPOSE:To obtain a mask having the large ratio of selection by using the selective oxide film of the surface of aluminum as the mask when aluminum is employed as the wiring material of the semiconductor integrated circuit device and the wiring material is patterned through dry etching. CONSTITUTION:An insulating film 102 bored at predetermined positions is formed onto a silicon substrate 101, and the aluminum film 103 is shaped onto the whole surface upper than the film 102. The oxide films 105 are formed onto the surface of the aluminum film 103 according to a prescribed wiring pattern through an anode oxidation method, etc. while using a photo-resist as a mask, dry etching employing a gas such as CCl4, etc. is conducted using the oxide films as the masks, and the wiring pattern is shaped. The aluminum oxide films have etching resisting property higher than aluminum to dry etching, and minute etching is enabled. |
