| 摘要 |
Silicon photodetector which has a high efficiency in a wide spectral range and which concentrates, in particular, the long-wave radiation component in the boundary layer of the semiconductor detector. According to the invention, this object is achieved by a silicon photodetector comprising a semiconductor layer having a photoelectric junction on one surface and a metal layer on the opposite surface in that the semiconductor surface opposite the photoelectric junction is structured as a reflection hologram which produces a focal plane in the boundary layer. Furthermore, an optically highly transparent layer may be provided on the photoelectric junction and a kinoform layer on top of said layer, the thickness of the optically highly transparent layer being equal to the optical wavelength of the kinoform layer and the kinoform layer also producing a focal plane in the boundary layer. The silicon photodetector is used as a radiation detector.
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