发明名称 SUBSTRATE COUPLED FLOATING GATE MEMORY CELL
摘要 <p>SUBSTRATE COUPLED FLOATING GATE MEMORY CELL Nonvolatile semiconductor electricallyalterable, floating-gate memory methods and devices which utilize substrate coupling for self-regulated, tunnel-current-shaping to provide improved device characteristics. The substrate coupling also facilitates the cell interconnection to other circuit elements.</p>
申请公布号 CA1133636(A) 申请公布日期 1982.10.12
申请号 CA19800344354 申请日期 1980.01.24
申请人 XICOR, INC. 发明人 SIMKO, RICHARD T.
分类号 H01L27/112;G11C5/14;G11C14/00;G11C16/04;H01L21/8246;H01L21/8247;H01L27/10;H01L29/788;H01L29/792;(IPC1-7):11C11/40 主分类号 H01L27/112
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