发明名称 HALBLEITERDIODENEINRICHTUNG, INSBESONDERE HALBLEITERDIODENZEILE, ZUR ERZEUGUNG ODER ZUM EMPFANG VON STRAHLUNG
摘要 For recording or indicating purposes, a novel row arrangement, provided with a very fine width spacing, for the low loss utilisation of the light (6) radiated by GaP luminescent diodes has been created. The semiconductor platelets (1) of the luminescent diodes are arranged at the edge of a carrier (2) with which they form a level surface. As a result, the emerging radiation can be used directly - undisturbed by contacting wires - at the side face (11) of the semiconductor platelets (1) which is perpendicular to the pn-junction area. This makes it possible to remove the emitted light with high intensity and defined contour and without flare phenomena. <IMAGE>
申请公布号 AT368321(B) 申请公布日期 1982.10.11
申请号 AT19770005264 申请日期 1977.07.20
申请人 SIEMENS AKTIENGESELLSCHAFT 发明人
分类号 G09F9/33;H01L25/04;H01L25/075;(IPC1-7):01L33/00;01L31/00 主分类号 G09F9/33
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