MANUFACTURE OF AMORPHOUS SILICON FILM BY REACTIVE LASER SPUTTERING

摘要

PURPOSE:To perform an evaporation deposition of amorphous silicon mixed with gas element at a high speed by a method wherein a laser beams having a short pulse width is repeatedly irradiated to the surface of silicon material placed in a required gas atmosphere. CONSTITUTION:A silicon material 5 and a vapor deposited substrate 10 are arranged in the interior of reactor tube 4 and the gases such as hydrogen, oxygen or the like are introduced into the reactor 4 at a predetermined pressure. A laser beam 2 having a pulse width shorter than laser 1 is introduced to the reactor 4 through a window 3, the silicon material 5 is exposed to irradiation of the laser rays and the surface thereof is heated. A silicon vapor is generated through this heating from the silicon material 5 to form an amorphous silicon film 10 containing the gas element on a substrate 10. The thickness of the silicon film 11 can be regulated by controlling the pulse width of the laser beam 2 or a repetition period or the like.