| 摘要 |
PURPOSE:To obtain an element having high photoelectric conversion efficiency of a photovoltaic element formed of a transparent conductive layer and an amorphous semiconductor layer by forming the transparent conductive layer of a two- layer transparent conductive layer of oxidized indium and oxidized tin and contacting the oxidized tin side with the conductive layer. CONSTITUTION:An oxidized indium series transparent conductive film 11 and an oxidized tin series transparent conductive film 12 are laminated on a transparent substrate 10 made of glass or the like, and an amorphous semiconductor layer 13 is formed thereon. The layer 13 of this case is formed sequentially from the film 12 of a P type amorphous Si layer 14, an i type amorphous Si layer 15, and an N type amorphous semiconductor layer 16 as a PIN junction. Subsequently, an aluminum electrode 17 is covered on the layer 16, solar light rays 18 are incident from the side of the substrate 10. When a stainless steel or the like is used for the substrate, the laminating sequence is reversely performed, and the light rays ar incident to the oxidized indium side. Thus, the sheet resistance of the transparent conductive layer can be reduced, and high efficiency can be obtained even if the element has relatively large area. |
