| 发明名称 |
Semiconductor device having an amorphous metal layer contact |
| 摘要 |
Ohmic contacts for high temperature semiconductor devices comprising a layer strongly bonded to the surface of the semiconductor in the form of an alloy of a metal in the amorphous state in which the metal is a transition metal or a refractory metal having a recrystallization temperature from the amorphous state in excess of 200 DEG C.
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| 申请公布号 |
US4350994(A) |
申请公布日期 |
1982.09.21 |
| 申请号 |
US19790081859 |
申请日期 |
1979.10.04 |
| 申请人 |
WISCONSIN ALUMNI RESEARCH FOUNDATION |
发明人 |
PEREPEZKO, JOHN H.;WILEY, JOHN D. |
| 分类号 |
H01L29/43;H01L21/28;H01L21/285;H01L21/48;(IPC1-7):H01L23/48;H01L29/46;H01L29/62 |
主分类号 |
H01L29/43 |
| 代理机构 |
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代理人 |
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| 主权项 |
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| 地址 |
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