| 摘要 |
PURPOSE:To improve quality of a semiconductor device by a method wherein size of an opening part in a spacer resist to be adhered on a bonding pad on a substrate is made as larger than the size of an opening part in a plated resist, and a part of the spacer resist is made to be buried at the circumference of the rising up part of a bump. CONSTITUTION:After Al wirings 2, the bonding pad 2a are formed on the substrate 1, a protective film 3 is adhered on the whole surface, and an opening part D1 is provided on the pad 2a. Moreover after the upper part of the protective film 3 is covered with the spacer resist layer 4 having the opening part D2 smaller than the D1, a barrier metal 5 is evaporated thereon. Then the plating resist layer 6 having the opening part D3 larger than the D1 is adhered thereon. After the bump 7 is formed, when the resist film 6, the barrier metal 5, and the spacer resist film 4 are stripped off by the lift off method, the spacer resist 4 is buried in between the bump and the protective film 3. Accordingly cushioning effect and sealing effect are exhibited, adhesion of the bump can be performed having high quality. |
