| 摘要 |
PURPOSE:To build a light emitting/receiving device very small in size by a method wherein a light emitting diode and a light receiving transistor are constructed on a one chip substrate. CONSTITUTION:An n<-> layer 2 is formed on an n<+> layer 1, which is further covered by an n layer 3, p layer 4, n layer 5, made exemplifiedly of an AlGaAs semiconductor. At about the central part of the n layer 5, a p diffused layer 8 is formed reaching as far as the p layer 4, and then an insulator film 7 is formed exemplifiedly of Si. The central part of the n layer 5, except where a circular emitting window 9 with a diameter (b), is vapor plated with AuZn for the building of a p type electrode 10. Surrounding the electrode 10, except where a ring shaped receiving window 11 with a diameter (c) is located, is a vapor plated n type electrode 12. Formed by AuGeNi vapor plating under the n layer 1 is an n type electrode 13. Then a groove 14 is provided to separate the P diffused layer 8 from the n layer 5 provided with a ring shaped receivng window 11. As a result, a light emitting diode composed of an n-p-n lamination light receiving transistor and a p-n junction is built. |
