| 摘要 |
PURPOSE:To stabilize the electrical characteristics by a method wherein a conductive layer is formed on Al electrodes via an insulation layer and contact holes are made in the conductive layer and the conductive layer is biased to the specified potential. CONSTITUTION:Al electrodes 8 and 8' are formed on a semiconductor substrate 1 via an insulation layer 2 and a layer 10 at conductive material such as Al, SnO2 or C is formed on the Al electrodes via an SiO2 layer 9. Then an SiO2 layer 11 is formed on the surface of the conductive layer 10 and contact holes are made in the conductive layer 10 and at the same time the surface of the conductive layer inside the contact hole is covered by insulation film and Au electrodes 13 are connected to the pads 12. Then the conductive layer 10 is connected to a certain part of the semiconductor substrate 1, the Al wiring 8 or the taking-out electrode 12. With this constitution, the surface is not charged and the electrical characteristics are improved. |
