SEMICONDUCTOR NONVOLATILE READ-ONLY STORAGE DEVICE

摘要

PURPOSE:To shorten access time by making it independent of the contents of a memory cell by holding a word line at a reference potential in stand-by mode. CONSTITUTION:Transistors (TR)200-208 constitute a row decoder and TRs 210-218 and an inverter 219 turn on the TR218 in stand-by mode. The TR219 is a memory cell one. The row decoder is controlled by a signal CE or -CE, so a word line contact 231 is at a potential level 0 in stand-by mode. The TR208 connects a contact 230 to the contact 231 for reading and disconnects them for writing. In stand-by mode, the potentials of a common contact 232 and the word line are zero.