| 摘要 |
PURPOSE:To improve the switching performance of the transistor as well as to eliminate the leakage current for the subject device by a method wherein an electrode is provided on the P<+> type annular diffusion region formed on a substrate and an N type epitaxial islant type region, and they are properly connected. CONSTITUTION:An electrode 29 is provided on an epitaxial island type region 14-2, and it is connected to an electrode 20. As a result, when a PNP transistor TR 5 is turned to ON position, all the holes provided on the epitaxial island type regions 14-1 and 14-2 can be collected on the electrodes 20 and 29 which are the collectors of the TR 5, and the interference and a leakage current arising on the transistor can be eliminated. Also, when a conductive status exists between the base emitters of the TR 5, all the holes provided from P type layers 13-1 and 15-1 to N type layers 11-1 and 14-2 are collected to the electrodes 20 and 29. As a result, the heating and the drop of voltage due to the Tr 5 can be reduced. Also, as to the NPNTR 6, electrodes 21, 30 and 31 are provided on the N type epitaxial island type regions 14-3, 14-6 and a P<+> type diffusion layer 15-6, and all of them are short-circuited, thereby enabling to collect all the holes to the layer 15-6. |
