| 摘要 |
Disclosed is a dynamic random access memory having junction field effect transistors as the transfer gates for the memory cells. Each of these transistors has a negative threshold VT; and means are provided for generating voltages VGH and VGL on a gate to respectively select and deselect a memory cell, and for generating voltages VH and VL to store those voltages in a selected cell wherein VGH-VT>VH, VGl-VT<VL and VL>VGH. |
