| 摘要 |
PURPOSE:To form an opening section in a stepped shape, and to improve the step coverage of an electrode by using a polycrystal silicon layer containing oxygen atoms as a surface passivation film. CONSTITUTION:A P type diffusion region 2, a thermally oxidized silicon layer 3, the polycrystal silicon layer 4 containing oxygen atoms and a polycrystal silicon layer 5 containing nitrogen atoms are formed to an N type silicon substrate 1. An oxide film 6 is shaped to the whole upper surface. The end sections of the layers 4, 5 are covered completely with the film 6 because no end section takes eaves-shaped formes at the time. The film 6 and the layer 3 are removed. A wall surface of the opening section 7 is formed in the stepped shape at that time, followed by the shaping of the electrode 10. |
