| 摘要 |
PURPOSE:To reduce the variation of processing and to prevent the generation of defects by a method wherein a wafer is processed by fitting and tightly fixing it on a wafer holder consisting of a material inert to the plasma gas to be used. CONSTITUTION:A thermal oxide film is formed on a silicon wafer, and on which a photoresist layer is formed. Then the sample, whereon an image was formed according to a prescription, is set on the wafer holder 1 having a smooth concaved section in the center of an aluminum plate, placed on a quartz wafer holder, inserted in the reaction chamber of the low-temperature reaction processing device, and an etching process is performed under the conditions, for example, of the flowing velocity of 0.3l/min for the mixed gas of CF4 and O2, the pressure of 0.4Torr, the frequency of 13.56MHz, and the output of 300W. |
