| 摘要 |
PURPOSE:To enable the contact resistance to be lowered by a method wherein a semiconductor forming a channel layer or another semiconductor formed thereon having close affinity to electrons are doped with single atomic layer. CONSTITUTION:After forming a non-doped GaAs layer 2 on an n<+>-GaAs substrate 1, an Si doped single atomic layer 3 containing 5X10<13> (each/cm<2>) of Si is formed and then another non-doped GaAs layer 2 20 Angstrom thick is further formed on the layer 3. Next, an n<+>-In0.8Ga0.2As layer 4 300 Angstrom thick doped with 1X10<19> (each/cm<2>) of Si is formed and then an Au electrode 5 and an AuGeNi ohmic electrode 6 are evaporated respectively on the layer 4 and the back surface of substrate 1 to make up an Au/In0.8Ga0.2As/GaAs structure. The potential barrier to electrons can be lowered by means of doping a semiconductor forming a channel or another semiconductor formed thereon having close affinity with single atomic layer. Through these procedures, a semiconductor device making the least contact resistance can be manufactured.
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