| 摘要 |
PURPOSE:To improve a moisture resistant property by a method wherein a silicone nitride film or a poly-crystal Si film is formed between a PSG film and a bonding pad formed on a field insulating film. CONSTITUTION:A PSG film 3 is formed on a semiconductor substrate 1 with a field insulating film 2 in between. When an Al bonding pad 4 is formed on the PSG film 3, an Si3N4 film or a poly-crystal Si film 6 which has a larger area than the bonding pad 4 is provided between the PSG film 3 and the bonding pad 4. Then an insulating protective layer 5 such as a plasma nitride film is formed covering the circumference of the bonding pad 4. With above configuration, even if a cracking is generated on the insulating film in the vicinity of the bonding pad by some mechanical impact such as by a bonding tool, the deterioration of the moisture resistant property can be avoided. |
