发明名称 TREATING METHOD FOR SEMICONDUCTOR SUBSTRATE
摘要 PURPOSE:To obtain the flat substrate surface without damaging its surface by a method wherein after resin is applied on the semiconductor substrate to which protruded foreign matter adheres, the flat plate is pressed down to pulverize the foreign matter, and then the pulverized foreign matter is removed together with the resin. CONSTITUTION:Highly viscous polyvinyl alcohol resin 3 is applied on the surface of an Si substrate 2 having protruded foreign matter 1 by a spin coat method. Next, a part of the protruded foreign matter 1 on the Si substrate 2 is pressed down and pulverized. Since the resin 3 is applied on the substrate 2 surface, said surface is not damaged in a pulverizing process. After that, when pure water is poured for dissolving and removing the resin 3, the pulverized foreign matter 5 is also removed simultaneously, allowing the flat surface to be obtained. For the resin 3, polyisoprene, etc., in addition to polyvinyl alcohol can be adopted. But, in this case, xylene and trichlene are required to be used as a solvent.
申请公布号 JPS5796532(A) 申请公布日期 1982.06.15
申请号 JP19800173593 申请日期 1980.12.09
申请人 FUJITSU KK 发明人 KANAZAWA MASAO
分类号 B26F3/04;H01L21/304;(IPC1-7):01L21/304 主分类号 B26F3/04
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