| 摘要 |
PURPOSE:To prepare the titled glass having a sufficient doping amount at high speed simply, by exposing rock crystal powder or finely divided powder of SiO2 glass at high temperature to a gas containing SiCl4, a gaseous additive, and water so that a dopant is added to the glass in a solid solution state. CONSTITUTION:Rock crystal powder or finely divided powder of SiO2 glass is exposed to the undermentioned doped silica glass forming gas at 500-1000 deg.C, so that SnO2 or PbO2 in a solid solution state is added to the rock crystal powder or finely divided powder of SiO2 glass. The glass is sintered into transparent glass. In the operation, as the doped silica glass forming gas is used a gas containing one or more gaseous additives selected from a Sn compound to be oxdized easily and a Pb compound to be oxidized easily, SiCl4, and water. By this method, doped silica glass having uniform dopant concentration distribution can be prepared inexpensively. |
