| 摘要 |
PURPOSE:To increase the diameters of the crystalline grains larger than the predetermined value by introducing nuclide to an Si series material formed on a substrate, doping it with oxygen or exposing it with oxidative atmosphere and then emitting an electron or laser light or annealing it. CONSTITUTION:A polycrystalline Si or amorphous Si 3 is formed on a glass, Si or metallic substrate 1 via an oxidized film layer or nitrided film layer 2, and an impurity such as In, Sb, or P is doped as a nuclide on the layer 3. Subsequently, an oxygen gas is introduced to dope it with oxygen or to expose it with oxidative atmosphere, and then an electron beam or a laser light is emitted or it is thermally annealed, thereby increasing the diameter of the crystalline grains larger than 1,000Angstrom . In this manner, large-diameter crystal grains can be obtained on the substrate, thereby improving the reliability of an semiconductor element. |
