| 摘要 |
PURPOSE:To obtain the bonding wire having strength required for bonding at high speed without damaging bonding property by containing 0.0001-0.01wt% titanium in gold having high purity and using the gold as the bonding wire. CONSTITUTION:The gold having high purity into which 0.0001-0.01wt% titanium is contained is employed as a gold wire for wire bonding used for connecting a semiconductor element electrode and an external lead. The quantity of titanium added into pure gold is limited in this manner because electric resistance increases when the content of titanium exceeds 0.01wt% and the effect of the addition of titanium is not displayed when the content is smaller than 0.0001wt%. Accordingly, grain size is not roughened, and the bonding wire, which is not disconnected during bonding work, is obtained. |
