发明名称 |
HALBLEITERANORDNUNG |
摘要 |
<p>A semiconductor device includes a semiconductor substrate having electrodes brazed thereto. The electrode is made of a Cu-C composite material in which carbon fibers are embedded in copper matrix. The carbon fibers are so disposed as to be in a ring-like shape or a loop shape substantially in parallel with a surface of the semiconductor substrate onto which the electrode is brazed. The carbon fibers disposed in an outer peripheral portion have a higher longitudinal elastic modulus than that of the carbon fibers positioned at a central portion of the electrode. The electrode thus has a thermal expansion coefficient approximating to that of the semiconductor substrate. Content of copper can be increased at the central portion of the electrode for attaining a high thermal conductivity.</p> |
申请公布号 |
DE3145648(A1) |
申请公布日期 |
1982.06.03 |
申请号 |
DE19813145648 |
申请日期 |
1981.11.17 |
申请人 |
HITACHI,LTD. |
发明人 |
ARAKAWA,HIDEO;KUNIYA,KEIICHI;NAMEKAWA,TAKASHI;OHASHI,MASABUMI |
分类号 |
H01L21/52;H01L21/58;H01L23/049;H01L23/051;H01L23/31;H01L23/492;(IPC1-7):01L23/48;01L23/30;01L29/74;01L23/14 |
主分类号 |
H01L21/52 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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