Method and apparatus for determining minority carrier diffusion length in semiconductors

摘要

Method and apparatus are provided for determining the diffusion length of minority carriers in semiconductors using the constant-magnitude surface-photovoltage (SPV) method. A servo system maintains a constant predetermined value of the SPV. A novel capacitance-pickup electrode couples the SPV to a preamplifier in the measurement system and functions to reduce SPV drift. A keyboard or computer is used to select both the operating optical wavelength of an adjustable monochromator and a network to compensate for the wavelength dependent sensitivity of a photodetector used to measure the illumination intensity (photon flux) on the semiconductor. Measurements of the relative photon flux for a plurality of wavelengths are plotted against the reciprocal of the optical absorption coefficient of the material. A linear plot of the data points is extrapolated to zero intensity. The negative intercept value on the reciprocal optical absorption coefficient axis of the extrapolated linear plot is the diffusion length of the minority carriers.