| 摘要 |
PURPOSE:To prevent the formation of an acute-angled edge and to reduce the leak current between wiring layers for the subject semiconductor device by a method wherein the first conductive pattern of a multiwiring structure is formed by performing selective oxidization on the conductive layer which was coated on the insulating film of the substrate surface. CONSTITUTION:An oxide film 2 is formed on the surface of a substrate 1, whereon a functional region was provided on the internal section, and after a polycrystalline Si layer 3, as a conductive layer, has been deposited on the upper section of the oxide film 2, a thermal oxide film 6 is formed on the surface of the polycrystalline Si layer 3. Then, a nitriding film pattern 7 is provided on the wiring formative region, a selective oxidation process is performed, and the first layer wiring 3b is formed by converting the layer 3 outside the region into an oxide film 8. Then, after the nitriding film 7 has been removed by etching together with a thermal oxide film 81 of the surface layer, an interlayer insulating film 9 is formed by oxidizing the upper part of the wiring 3b, and then the wiring layer 5 of the second layer is formed by crossingly laminating an Si layer 5. Through these procedures, the upper part of the first wiring layer 3b can be formed in an obtuse angled shape, with which the generation of current concentration due to the leak current between the wiring 3b and 5 can be reduced. |
