| 摘要 |
PURPOSE:To smoothly remove excessive molten liquid of liquid phase epitaxially growing molten liquid contacted on a semiconductor substrate by providing shallow recesses connected to a substrate arranging base slided with a molten liquid containing unit containing the molten liquid on the surface in addition to the recess for containing the substrate along the longitudinal direction of the base. CONSTITUTION:A recess 211 containing a semiconductor substrate 30 to be grown is provided on a substrate arranging base 210 forming a liquid phase epitaxial growing device, a molten liquid containing unit 20 filled with molten liquids 40, 41 for epitaxially growing with partition wall 21 partitioned on the base 210 therein are slided thereon, the liquid 40 and then the liquid 41 are contacted with the substrate 30 to desirably grow them. With this structure, one partition of the recess 211 is removed newly, shallow recesses 211 continued to the recess 211 is provided on the base 210 toward the sliding direction, and excessive liquid becoming unnecessary is exhausted to the recess 211 after the growth. With this structure, the recess 211 may be elevationally moved, thereby remarkably smoothening the exhaust of the molten liquid. |
